AustralieFrV1, Main, Exploration, bibRecord, 009C34

Si-based near infrared photodetectors operating at 10Gbit/s

Identifieur interne : 009C34 ( Main/Exploration ); précédent : 009C33; suivant : 009C35

Si-based near infrared photodetectors operating at 10Gbit/s

Auteurs : Lorenzo Colace [Italie] ; Michele Balbi [Italie] ; Gianlorenzo Masini [Italie] ; Gaetano Assanto [Italie] ; Hsin-Chiao Luan [États-Unis] ; Lionel C. Kimerling [États-Unis]

Source :

Journal of luminescence [ 0022-2313 ] ; 2006.

RBID : Pascal:07-0004302

Descripteurs français

Pascal (Inist)
- Rayonnement IR proche, Photodétecteur, Dépôt chimique phase vapeur, Recuit thermique, Photodiode, Diode couche intrinsèque, Silicium, Germanium, Si, 8560G.

English descriptors

KwdEn :
- Chemical vapor deposition, Germanium, Near infrared radiation, Photodetector, Photodiode, Silicon, Thermal annealing, p i n diode.

Abstract

We report on fast p-i-n near infrared photodetectors in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600°C followed by thermal annealing at 900°C. We also verified that bypassing the thermal treatment did not have significant effects on the resulting crystal quality, allowing to considerably reducing the thermal budget hence simplify the integration with silicon. We demonstrate the operation of photodiodes with responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 μm, respectively, as well as open-eye diagrams at 10 Gbit/s.

Affiliations:

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Le document en format XML

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<front><div type="abstract" xml:lang="en">We report on fast p-i-n near infrared photodetectors in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600°C followed by thermal annealing at 900°C. We also verified that bypassing the thermal treatment did not have significant effects on the resulting crystal quality, allowing to considerably reducing the thermal budget hence simplify the integration with silicon. We demonstrate the operation of photodiodes with responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 μm, respectively, as well as open-eye diagrams at 10 Gbit/s.</div>
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Si-based near infrared photodetectors operating at 10Gbit/s

Si-based near infrared photodetectors operating at 10Gbit/s

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri